In collaboration with Shanghai Institute of Technical Physics and Centrale-Supélec, Paris, researchers from the group have shown that organic materials can be used for tunnel barriers in memory devices as a cheaper and eco-friendly replacement of their inorganic counterparts. In this paper, Tian et al. use poly(vinylidene fluoride) with 1-2 layer thickness to achieve giant tunnel electroresistance of 1,000% at room temperature. These results should stimulate further work combining organic spintronics with organic ferroelectrics and will open a new route for low cost, silicon-compatible or potentially rollable organic devices.
Tunnel electroresistance through organic ferroelectrics
B. Tian et al, Nature Commun. 7, 11502(2016)